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LTC5536 600MHz to 7GHz Precision RF Detector with Fast Comparator Output
FEATURES

DESCRIPTIO
Temperature Compensated Internal Schottky Diode RF Detector Wide Input Frequency Range: 600MHz to 7GHz* Wide Input Power Range: -26dBm to 12dBm Fast Comparator Output with Latch Enable 25ns Response Time with 0dBm RF Input Level Rail-to-Rail Output Swing Comparator Output Current: 20mA Wide VCC Range of 2.7V to 5.5V Low Operating Current: 2mA Available in a Low Profile (1mm) SOT-23 Package
The LTC(R)5536 is an RF power detector for RF applications operating in the 600MHz to 7GHz range. A temperature compensated Schottky diode peak detector and fast comparator are combined in a small ThinSOTTM package. The supply voltage range is optimized for operation from a single cell lithium-ion or three cell NiMH battery. The RF input voltage is peak detected using an on-chip Schottky diode. The detected voltage is compared against a reference voltage at VM. The response time from the RF input to VOUT can be as little as 20ns. The comparator output is latched when LEN is high or is transparent when LEN is low. The LTC5536 operates with RF input power levels from -26dBm to 12dBm.
, LTC and LT are registered trademarks of Linear Technology Corporation. ThinSOT is a trademark of Linear Technology Corporation. *Operation at higher frequencies is possible with reduced performance.
APPLICATIO S

RF Signal Presence Detectors for: 802.11a, 802.11b, 802.11g, 802.15 Optical Data Links Wireless Data Modems Wireless and Cable Infrastructure RF Power Alarm Envelope Detector RF ID Tag Reader
TYPICAL APPLICATIO
VM Comparator Switching Voltage vs RF Input Power, 600MHz - 7GHz
3200 2800 600MHz 1000MHz 2000MHz 3000MHz 4000MHz 5000MHz 6000MHz 7000MHz VCC = 3.6V VLEN = 0V TA = 25C
600MHz to 7GHz RF Power Detector
VM SWITCHING VOLTAGE (mV)
33pF RF INPUT
2400 2000 1600 1200 800 400
LTC5536 1 VCC 6 RFIN 100pF 2 GND VOUT 5
VCC 0.1F
VM 3 V M REFERENCE
LEN
5536 TA01
4
DISABLE ENABLE
0 -28 -24 -20 -16 -12 -8 -4 0 4 INPUT RF POWER (dBm)
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8 12
5536 TA01b
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1
LTC5536
ABSOLUTE
(Note 1)
AXI U RATI GS
PACKAGE/ORDER I FOR ATIO
TOP VIEW RFIN 1 GND 2 VM 3 6 VCC 5 VOUT 4 LEN
VCC, VOUT, VM, LEN .................................... -0.3V to 6V RFIN Voltage ...................................(VCC 1.5V) to 6.5V IVOUT .................................................................. 25mA Operating Temperature Range (Note 2) .. - 40C to 85C Maximum Junction Temperature ......................... 125C Storage Temperature Range ................ - 65C to 150C Lead Temperature (Soldering, 10 sec).................. 300C
ORDER PART NUMBER LTC5536ES6 S6 PART MARKING LBDS
S6 PACKAGE 6-LEAD PLASTIC TSOT-23
TJMAX = 125C, JA = 250C/W
Consult LTC Marketing for parts specified with wider operating temperature ranges.
The denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25C. VCC = 3.6V, RF Input Signal is Off, VM = 160mV unless otherwise noted.
PARAMETER VCC Operating Voltage IVCC Operating Current VOUT VOL (No RF Input) VOUT VOH (No RF Input) VOUT Output Current VM Voltage Range VM Input Current VM Switch Point (No RF Input) LEN Input Current LEN Switch Point RFIN Input Frequency Range RFIN Input Power Range RFIN AC Input Resistance RFIN Input Shunt Capacitance Response Time tr VOUT Rise Time tf VOUT Fall Time VOUT Low to High VOUT High to Low LEN = 3.6V Low to High High to Low (Note 5) RF Frequency = 600MHz to 7GHz (Note 3, 4) VCC = 2.7V to 5.5V F = 1000MHz, Pin = -25dBm F = 1000MHz, Pin = -25dBm VRF = 1VP-P, fRF = 1000MHz, VM = 0.15V, VOUT Low to High Transition 0.5V to 3V 3V to 0.5V IVOUT = 0mA, VM = 0.5V ISINK = 20mA, VM = 0.5V ISOURCE = 20mA, VM = 0V

ELECTRICAL CHARACTERISTICS
CONDITIONS
MIN

TYP 2.1 0.8 VCC - 0.4
MAX 5.5 3
UNITS V mA V V mA
2.7
15 -0.5 65 22 1.5
20 VCC -1. 8 0.5 100 90 135 42 0.5 600 to 7000 -26 to 12 220 0.65 20 2 2
Note 1: Absolute Maximum Ratings are those values beyond which the life of a device may be impaired. Note 2: Specifications over the -40C to 85C operating temperature range are assured by design, characterization and correlation with statistical process controls.
Note 3: RF performance is tested at 1800MHz. Note 4: Guaranteed by design. Note 5: Operation at higher frequencies is possible with reduced performance. Consult factory for more information.
2
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V A mV mV A V V MHz dBm pF ns ns ns
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LTC5536 TYPICAL PERFOR A CE CHARACTERISTICS
Supply Current vs Supply Voltage RF Input Signal Off, VLEN = 0V
4.0 3.5
SUPPLY CURRENT (mA) SUPPLY CURRENT (mA)
VM = 0.25V
VM SWITCHING VOLTAGE (mV)
3.0 2.5 2.0 1.5 1.0 0.5 0 2.5 3.0 4.5 3.5 4.0 SUPPLY VOLTAGE (V) 5.0 5.5
5536 G01
TA = 85C TA = 25C TA = -40C
VM Comparator Switching Voltage vs RF Input Power 1000MHz
2800
VM SWITCHING VOLTAGE (mV)
TA = -40C 2000 1600 1200 800 TA = 85C 400 0 -28 -24 -20 -16 -12 -8 -4 0 4 RF INPUT POWER (dBm)
VM SWITCHING VOLTAGE (mV)
2000 1600
TA = -40C
VM SWITCHING VOLTAGE (mV)
2400
VCC = 3.6V VLEN = 0V
TA = 25C
VM Comparator Switching Voltage vs RF Input Power 4000MHz
2800
VM SWITCHING VOLTAGE (mV)
VM SWITCHING VOLTAGE (mV)
VM SWITCHING VOLTAGE (mV)
2400 2000
VCC = 3.6V VLEN = 0V
1600 1200 800 400 TA = 85C 8 12 TA = 25C
0 -28 -24 -20 -16 -12 -8 -4 0 4 RF INPUT POWER (dBm)
UW
8 TA = -40C
Supply Current vs Supply Voltage RF Input Signal Off, VLEN = VCC
4.0 3.5 3.0 TA = 85C 2.5 2.0 1.5 1.0 0.5 0 2.5 3.0 4.5 3.5 4.0 SUPPLY VOLTAGE (V) 5.0 5.5
5536 G02
VM Comparator Switching Voltage vs RF Input Power 600MHz
2800 2400 2000 1600 1200 800 400 0 -28 -24 -20 -16 -12 -8 -4 0 4 RF INPUT POWER (dBm) TA = 25C VCC = 3.6V VLEN = 0V TA = -40C
VM = 0.25V
TA = 25C TA = -40C
TA = 85C
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12
5536 G03
VM Comparator Switching Voltage vs RF Input Power 2000MHz
2800 2400 VCC = 3.6V VLEN = 0V 2800 2400 2000 1600 1200 800 400
VM Comparator Switching Voltage vs RF Input Power 3000MHz
VCC = 3.6V VLEN = 0V
TA = -40C
TA = 25C 1200 800 400 TA = 85C
TA = 25C
TA = 85C
12
0 -28 -24 -20 -16 -12 -8 -4 0 4 RF INPUT POWER (dBm)
8
12
0 -28 -24 -20 -16 -12 -8 -4 0 4 RF INPUT POWER (dBm)
8
12
5536 G04
5536 G05
5536 G06
VM Comparator Switching Voltage vs RF Input Power 5000MHz
2800 2400 2000 1600 1200 800 400 TA = 85C 8 12 TA = 25C VCC = 3.6V VLEN = 0V 2800 2400 2000 1600 1200
VM Comparator Switching Voltage vs RF Input Power 6000MHz
VCC = 3.6V VLEN = 0V
TA = -40C
TA = -40C
TA = 25C 800 400 TA = 85C 0 -28 -24 -20 -16 -12 -8 -4 0 4 RF INPUT POWER (dBm) 8 12
0 -28 -24 -20 -16 -12 -8 -4 0 4 RF INPUT POWER (dBm)
5536 G07
5536 G08
5536 G09
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LTC5536 TYPICAL PERFOR A CE CHARACTERISTICS
VM Comparator Switching Voltage vs RF Input Power 7000MHz
SLOPE OF VM SWITCHING VOLTAGE (mV/dB)
2800 2400 2000 1600 1200 800 400 TA = 85C 8 12 TA = - 40C TA = 25C VCC = 3.6V VLEN = 0V 1000
VCC = 3.6V
SLOPE OF VM SWITCHING VOLTAGE (mV/dB)
VM SWITCHING VOLTAGE (mV)
0 -28 -24 -20 -16 -12 -8 -4 0 4 RF INPUT POWER (dBm)
Slope of VM Comparator Switching Voltage vs RF Input Power at 2000MHz
SLOPE OF VM SWITCHING VOLTAGE (mV/dB) SLOPE OF VM SWITCHING VOLTAGE (mV/dB)
1000 VCC = 3.6V 1000
VCC = 3.6V
SLOPE OF VM SWITCHING VOLTAGE (mV/dB)
100
TA = 25C TA = - 40C
10
TA = 85C
1 0 4 -20 -16 -12 -8 -4 RF INPUT POWER (dBm)
Slope of VM Comparator Switching Voltage vs RF Input Power at 5000MHz
SLOPE OF VM SWITCHING VOLTAGE (mV/dB) SLOPE OF VM SWITCHING VOLTAGE (mV/dB)
1000 VCC = 3.6V 1000
VCC = 3.6V
SLOPE OF VM SWITCHING VOLTAGE (mV/dB)
100
TA = - 40C TA = 25C
10
TA = 85C
1 0 4 -20 -16 -12 -8 -4 RF INPUT POWER (dBm)
4
UW
8 8
Slope of VM Comparator Switching Voltage vs RF Input Power at 600MHz
1000
Slope of VM Comparator Switching Voltage vs RF Input Power at 1000MHz
VCC = 3.6V
100 TA = 25C TA = - 40C 10 TA = 85C
100
TA = - 40C 10 TA = 85C 1 0 4 -20 -16 -12 -8 -4 RF INPUT POWER (dBm) TA = 25C
5536 G10
1 0 4 -20 -16 -12 -8 -4 RF INPUT POWER (dBm)
8
12
8
12
5536 G11
5536 G12
Slope of VM Comparator Switching Voltage vs RF Input Power at 3000MHz
1000
Slope of VM Comparator Switching Voltage vs RF Input Power at 4000MHz
VCC = 3.6V
100
TA = 25C
100 TA = 25C TA = - 40C 10 TA = 85C
TA = - 40C 10 TA = 85C
12
5536 G13
1 0 4 -20 -16 -12 -8 -4 RF INPUT POWER (dBm)
8
12
5536 G14
1 0 4 -20 -16 -12 -8 -4 RF INPUT POWER (dBm)
8
12
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Slope of VM Comparator Switching Voltage vs RF Input Power at 6000MHz
1000
Slope of VM Comparator Switching Voltage vs RF Input Power at 7000MHz
VCC = 3.6V
100 TA = - 40C TA = 25C 10 TA = 85C 1 0 4 -20 -16 -12 -8 -4 RF INPUT POWER (dBm)
100 TA = 25C
TA = - 40C
10 TA = 85C
12
8
12
5536 G16
5536 G17
1 0 4 -20 -16 -12 -8 -4 RF INPUT POWER (dBm)
8
12
5536 G18
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LTC5536 TYPICAL PERFOR A CE CHARACTERISTICS
RFIN Input Impedance (Pin = -25dBm, VCC = 3.6V, TA = 25C)
FREQUENCY (GHz) 0.60 0.79 0.98 1.18 1.37 1.56 1.75 1.94 2.14 2.33 2.52 2.71 2.90 3.10 3.29 3.48 3.67 3.86 4.06 4.25 4.44 4.63 4.82 5.02 5.21 5.40 5.59 5.78 5.98 6.17 6.36 6.55 6.74 6.87 7.00 RESISTANCE () 152.91 123.50 102.42 86.70 74.80 65.80 58.82 53.15 48.80 45.86 42.88 40.43 38.21 35.73 34.09 32.16 30.77 30.30 27.45 25.57 24.59 23.92 23.62 23.45 23.24 23.30 23.66 24.20 25.03 25.27 25.06 25.08 25.29 25.59 25.99 REACTANCE () -116.16 -111.98 -105.03 -96.82 -88.72 -80.93 -73.67 -67.22 - 60.93 - 55.62 -51.52 -47.41 - 43.52 - 39.58 - 35.73 - 32.68 - 28.25 - 26.77 - 22.91 -19.02 -15.00 -11.08 -7.35 -3.68 - 0.09 3.53 7.08 10.37 13.36 15.93 18.97 22.50 26.13 28.64 31.20
UW
S11 Forward Reflection Impedance
0.6GHz-7.0GHz
5536 G19
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LTC5536 TYPICAL PERFOR A CE CHARACTERISTICS
RFIN Input Impedance (Pin = 0dBm, VCC = 3.6V, TA = 25C)
FREQUENCY (GHz) 0.60 0.79 0.98 1.18 1.37 1.56 1.75 1.94 2.14 2.33 2.52 2.71 2.90 3.10 3.29 3.48 3.67 3.86 4.06 4.25 4.44 4.63 4.82 5.02 5.21 5.40 5.59 5.78 5.98 6.17 6.36 6.55 6.74 6.87 7.00 RESISTANCE () 171.28 132.48 106.05 87.75 74.19 64.17 56.84 50.77 46.69 43.66 40.24 38.17 35.92 33.68 32.26 30.54 28.02 29.16 25.08 23.57 22.55 21.87 21.40 21.14 20.92 21.01 21.33 21.82 22.46 22.63 22.34 22.31 22.53 22.80 23.17 REACTANCE () -163.91 -151.40 -136.13 -122.84 -110.86 -100.09 - 91.10 - 81.95 - 74.70 -68.01 - 62.54 - 58.00 - 53.32 - 48.71 - 44.12 -40.76 -36.26 -33.25 -30.21 -25.89 -21.78 -17.40 - 13.49 -9.71 -5.99 -2.54 1.33 4.57 7.95 10.65 13.54 17.14 20.99 23.53 25.92
6
UW
S11 Forward Reflection Impedance
0.6GHz-7.0GHz
5536 G20
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LTC5536
PI FU CTIO S
RFIN (Pin 1): RF Input Voltage. Referenced to VCC. A coupling capacitor must be used to connect to the RF signal source. The frequency range is 600MHz to 7GHz. This pin has an internal 500 termination, an internal Schottky diode detector and a peak detector capacitor. GND (Pin 2): Ground. VM (Pin 3): Comparator Negative Input. Apply reference voltage to this pin. LEN (Pin 4): Latch Enable Input. Output is latched when LEN is high and transparent when LEN is low. VOUT (Pin 5): Comparator Output. VCC (Pin 6): Power Supply Voltage, 2.7V to 5.5V. VCC should be bypassed appropriately with ceramic capacitors.
BLOCK DIAGRA
RFSOURCE 12pF TO 200pF (DEPENDING ON APPLICATION)
RFIN
1 3 500 VP 7.5k 15pF 7.5k BIAS VM
GND 2
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VCC 6
+
COMP 500 5 VOUT
-
+
RF DET 100mV DC BIAS 4 10k 110k LEN
-
50A
50A
5536 BD
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LTC5536
APPLICATIO S I FOR ATIO
Operation The LTC5536 is configured as a fast detector and high speed comparator for RF power detection and RF power alarms. The product integrates several functions to provide RF power detection over frequencies ranging from 600MHz to 7GHz. These functions include an RF Schottky diode peak detector, a level shift amplifier to convert the RF input signal to low frequency, and a fast comparator. The LTC5536 provides a comparator reference input VM and a latch enable input LEN. RF Detector The internal RF Schottky diode peak detector and level shift amplifier convert the RF input signal to a low frequency signal. The detector demonstrates excellent efficiency and linearity over a wide range of input power. The Schottky diode is biased at about 55A, and drives a 15pF internal peak detector capacitor. High Speed Comparator The fast internal comparator compares the external reference voltage at VM to the internal signal voltage from the peak detector, and produces the output signal, VOUT. The internal peak detector voltage is factory trimmed to 100mV with no RF signal present. The comparator has approximately 10mV of hysteresis, with a typical VOUT low-to-high switching point of 100mV and a VOUT high-to-low switching point of 90mV with no RF signal present. The comparator also has a built-in latch. This will cause the VOUT output to latch high on a positive comparator transition (increasing RF power), when the LEN pin is high, as indicated in the waveforms of Figure 1. For transparent
LEN EXTERNAL ENABLE OUTPUT RF DET OUTPUT OF COMPARATOR VOUT TRANSPARENT VOUT LATCHED VOUT TRANSPARENT
VM VP VOUT
Figure 1. LTC5536 LEN Function Waveform
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operation of the comparator (no latching action), the LEN pin should be connected to ground. The comparator output (VOUT) rise and fall times are approximately 2ns (unloaded). The propagation delay for the comparator alone was characterized by applying a continuous 2GHz RF signal to the RFIN input. Then a 1MHz square wave (0V to 2.5V) was applied to the VM input to switch the comparator. Note that there is a signal inversion, because the VM pin is connected internally to the negative comparator input. The time delay from the transition edge of the square wave at the VM input to the corresponding VOUT output transition (rising or falling) is shown in Table 1.
Table 1. Comparator Propagation Delay
RF Input Level (dBm) -10 0 10 VOUT Rising Edge Delay (ns) 38.5 24 20 VOUT Falling Edge Delay (ns) 36 40 86
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Overall Propagation Delay and Response Time Figure 2 shows measurements of total propagation delay from the RFIN signal input to the VOUT output of the LTC5536, plotted as a function of RF input power. The response is shown for RF Signal Absent-to-RF Signal Present Transitions (Rising Edge VOUT), and for RF Signal Present-to-RF Signal Absent Transitions (Falling Edge VOUT). The LTC5536's RF detector is optimized as a positive peak detector. Consequently, the device responds to a rising signal at the RF input much more rapidly than to a falling signal. Correspondingly, Rising Edge VOUT transitions are much more rapid than Falling Edge transitions, as shown in Figure 2. The minimum propagation delay is about 20ns at room temperature, in response to strong overdrive conditions at the RFIN input. These results were measured by applying a 1GHz RF signal that was amplitude modulated by a 1MHz square wave with 50% duty cycle. An example time domain waveform is shown in Figure 3.
5536 AI01
LTC5536
APPLICATIO S I FOR ATIO
Higher Frequency Operation
Operation of the LTC5536 at higher frequencies, to 12GHz or above, is possible with reduced performance. Figure 4 plots the VM switching voltage vs RFIN input power with a 12GHz RF input. Consult factory for more information. High Speed Design Techniques As with all high speed comparators, careful attention to printed circuit board layout and design is important in order to ensure signal integrity. The most common problem involves insufficient power supply bypassing. Bypass capacitors should be placed as close as possible to the LTC5536 VCC pin. A good high frequency capacitor, such
80
OUTPUT RISING EDGE DELAY (ns)
150mV
70 60 50 40 115mV 30 20 10 0 -18 -14
Figure 2. Propagation Delay vs RF Input Power
RFIN INPUT SIGNAL
VOUT OUTPUT SIGNAL
Figure 3. Propagation Delay Example
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as a 100pF ceramic, is recommended, in parallel with a larger capacitor (e.g., 0.1F). Avoid ground bounce problems by proper attention to grounding, including the use of a low impedance ground plane. If necessary, edge transition time at the comparator output, VOUT, may be increased by means of an output R-C low pass filter. Poor trace routes and high source impedances are also common sources of problems. Keep all trace lengths as short as possible and avoid running the output trace close to the VM or the LEN traces on the PC board. Also, keep the VM source impedance low and decouple the VM pin with an appropriate capacitor if necessary.
350
OUTPUT FALLING EDGE DELAY (ns)
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FALLING VCC = 3.6V EDGE TA = 25C OUTPUT LOAD TO GROUND: SHUNT R = 1k, C = 10pF VM = 200mV 115mV 150mV VM = 200mV RISING EDGE -10 -6 -2 2 6 10
5536 F02
300 250 200 150 100 50 0
RF INPUT POWER (dBm)
RF INPUT = 2dBm 1000MHz, ASK MODULATED
100ns/DIV
5536 F03
2V/DIV VM = 200mV VCC = 3.6V OUTPUT LOAD (TO GROUND): SHUNT R = 1k SHUNT C = 10pF
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LTC5536
APPLICATIO S I FOR ATIO
1200
VM SWITCHING VOLTAGE (mV)
1000 800 600 400 200
VCC = 3.6V VLEN = 0V TA = 25C
0 -20 -16 -12 -8 -4 4 0 RF INPUT POWER (dBm)
Figure 4. VM Comparator Switching Voltage vs RF Input Power at 12GHz
RFIN
C4 39pF 1 R1 (OPT) 2 3
VM REFERENCE
Figure 5. Demo Board Schematic
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VCC 2.7V TO 5.5V LTC5536ES6 RFIN VCC 6 5 4 VOUT LEN C2 100pF C1 0.1F
GND VOUT VM LEN
5536 F05
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LTC5536
PACKAGE DESCRIPTIO U
S6 Package 6-Lead Plastic TSOT-23
(Reference LTC DWG # 05-08-1636)
0.62 MAX 0.95 REF 2.90 BSC (NOTE 4) 1.22 REF 1.4 MIN 2.80 BSC 1.50 - 1.75 (NOTE 4) PIN ONE ID 0.95 BSC 0.30 - 0.45 6 PLCS (NOTE 3) 0.80 - 0.90 0.20 BSC 1.00 MAX DATUM `A' 0.01 - 0.10 0.09 - 0.20 (NOTE 3) 1.90 BSC
S6 TSOT-23 0302
3.85 MAX 2.62 REF
RECOMMENDED SOLDER PAD LAYOUT PER IPC CALCULATOR
0.30 - 0.50 REF
NOTE: 1. DIMENSIONS ARE IN MILLIMETERS 2. DRAWING NOT TO SCALE 3. DIMENSIONS ARE INCLUSIVE OF PLATING 4. DIMENSIONS ARE EXCLUSIVE OF MOLD FLASH AND METAL BURR 5. MOLD FLASH SHALL NOT EXCEED 0.254mm 6. JEDEC PACKAGE REFERENCE IS MO-193
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Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
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LTC5536
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Linear Technology Corporation
1630 McCarthy Blvd., Milpitas, CA 95035-7417
(408) 432-1900 FAX: (408) 434-0507
LT/TP 1004 1K * PRINTED IN USA
www.linear.com
(c) LINEAR TECHNOLOGY CORPORATION 2004

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